SI-9002 - Oscilloscope Differential probe

Main features

  • Bandwidth DC to 25MHz (-3dB)
  • Attenuation Ratio 1:20 or 1:200
  • Accuracy ±2%
  • Rise Time 14 ns
  • Input Impedance 4 MOhm, 5.5 pF each side ground
  • Input Voltage Differential Range
    • 1:20 ±140 V (DC+Peak AC) or 140 Vrms
    • 1:200 ±1400 V (DC+Peak AC) or 1000 Vrms
    • Common Mode Range ±1400 V (DC+Peak AC) or 1000 Vrms
    • Absolute Max. Voltage 1 ±1400 V (DC+Peak AC) or 1000 Vrms CAT III
  • Output
    • Swing (into 2k ohm load) +/-7 V
    • Offset (typical) <+/-5 mV
    • Noise (typical) 0.7 mVrms
    • Impedance (typical) 50 Ohm (for using 1MOhm input system oscilloscope)
  • CMRR (typical) -80 dB @ 50 Hz, -60 dB @ 20 kHz
Price request Datasheet

The Differential probe SI-9002 extends the measurement power of oscilloscopes to power semiconductor circuits. This Differential Probe provides any general oscilloscope with a high voltage differential input.

The Differential probe SI-9002 is small and light, so it can be used in a very convenient way; just plug it into the input of, for example, the Handyscope HS5. The wide bandwidth and the high accuracy of this Differential Probe cater for a wide range of applications.

Using a built-in differential amplifier, the Differential probe SI-9002 scales and converts the high voltage differential input to a low voltage single ended BNC output. The differential input is useful in measurements of power semiconductor circuits, as no reference to ground is required. Both the positive and negative sides of the balanced input possess high voltage differential input up to 700 V, and its sensitivity can extend down to 100 mV. With high bandwidth and high response speed, the Differential probe SI-9002 is adequate for accurate dV/dt measurement in the fastest switching circuits of thyristors, bipolar transistors, or power MOSFETS.

SI-9002Oscilloscope Differential probe