M2100-T - The M-2100-T Amplifier Module is a rugged source of RF power, useful for ultrasonics, laser modulation, RFI/EMI, plasma equipment and general laboratory applications. This module is designed to be integrated in to a system. It requires a DC voltage input and forced air cooling. The M-2100-T represents E&I’s commitment to providing RF power amplifiers of […]

Main features

  • Power (P1dB) 100 W
  • Frequency range 0.01 to 12 MHz
  • Power supply 42 VDC
  • Gain 20 dB
  • Harmonic -20 dBc
Price request Datasheet
The M-2100-T Amplifier Module is a rugged source of RF power, useful for ultrasonics, laser modulation, RFI/EMI, plasma equipment and general laboratory applications.
This module is designed to be integrated in to a system. It requires a DC voltage input and forced air cooling.
The M-2100-T represents E&I’s commitment to providing RF power amplifiers of the highest quality, durability and ruggedness.
The M-2100-T produces 100 Watts of Class A linear power output over the entire frequency range from 10 KHz to 12 MHz.
It has very low harmonic distortion along with low IMD products. Operation over the band is achieved without the need for any band switching or indeed any adjustments. The power gain is rated at 5
0 dB with a typical gain flatness of +/ – 1.5 dB
The M-2100-T is built to withstand VSWR load condition at power levels of up to 100 watts.
The RF power is delivered by rugged DMoS FETs, de-rated to provide for excellent MTBF figures.
M2100-T

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